Advances in Optoelectronic Materials

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: 31 December 2026 | Viewed by 1429

Special Issue Editors


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Guest Editor
Equipe des Matériaux Avancés pour la Transition Energetique (MATE), Ecole Normale Supérieure de Meknes, Université Moulay Ismail, Meknes, Morocco
Interests: nanomaterials; energy; materials sciences; condensed matter

E-Mail Website
Guest Editor
Equipe des Matériaux Avancés pour la Transition Energetique (MATE), Ecole Normale Supérieure de Meknes, Université Moulay Ismail, Meknes, Morocco
Interests: nanomaterials; energy; materials sciences; condensed matter

Special Issue Information

Dear Colleagues,

This Special Issue, titled Advances in Optoelectronic Materials, focuses on the latest innovations and developments in the field of optoelectronics, which combines optical and electronic components to improve device performance across a variety of applications. This Special Issue highlights cutting-edge research on new materials that enhance the efficiency and functionality of devices such as LEDs, solar cells, and photodetectors. Contributions examine the synthesis and characterization of novel semiconductor materials, nanostructures, and hybrid systems that exhibit exceptional optoelectronic properties. This includes advancements in 2D materials like graphene and transition metal dichalcogenides, which are explored for their unique optical and electronic attributes. Moreover, this Special Issue addresses challenges in material stability, integration into existing technologies, and scalability for commercial applications. Articles should focus on innovative fabrication techniques and methods for improving the charge transport and light absorption capabilities of optoelectronic devices. The role of theoretical modeling and computational simulations in predicting material behavior and guiding experimental efforts should also be emphasized, providing a comprehensive perspective on how interdisciplinary approaches can drive future developments. Overall, this Special Issue serves as a valuable resource for researchers and professionals in the field, showcasing significant progress and identifying future directions for research in optoelectronic materials. It underscores the impact of these materials on advancing technology in renewable energy, telecommunications, and display technologies, as well as highlighting their importance in addressing contemporary challenges in society.

Dr. Mourad Boutahir
Dr. El Mehdi El Khattabi
Guest Editors

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Keywords

  • two-dimensional materials
  • DFT
  • CVD

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Published Papers (2 papers)

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Research

15 pages, 3873 KB  
Article
Novel Method to Prepare Perovskite MAPb0.75Sn0.25I3 Solar Cells with Sn2+/Sn4+ Oxidation Mitigation via Molarity Reduction in a Non-Inert Atmosphere Processing
by José E. Erro-Quiñonez, Ricardo Rangel-Segura, Ricardo Rodríguez Carvajal, Frank Romo-García, Oscar E. Contreras-López, Carlos F. Arias-Ramos, Francisco Enrique Cancino-Gordillo and Rafael García-Gutiérrez
Crystals 2026, 16(4), 222; https://doi.org/10.3390/cryst16040222 - 26 Mar 2026
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Abstract
Sn-based perovskites offer lower lead content but face a major challenge: Sn2+ oxidizes readily, which has led most research groups to use gloveboxes and chemical additives during processing. Here, we investigate whether precursor molarity alone can mitigate this oxidation problem in ambient [...] Read more.
Sn-based perovskites offer lower lead content but face a major challenge: Sn2+ oxidizes readily, which has led most research groups to use gloveboxes and chemical additives during processing. Here, we investigate whether precursor molarity alone can mitigate this oxidation problem in ambient air. MAPb0.75Sn0.25I3 solar cells with mesoporous N–i–P architecture were prepared from 1.0 M and 0.9 M solutions by spin-coating with ethyl acetate antisolvent, under standard lab conditions (28–34 °C, 30–45% RH). The characterization included SEM, XRD, XPS, profilometry, and J–V measurements. The 0.9 M concentration produced thinner films (275 nm vs. 474 nm), better Sn2+/Sn4+ ratios (16.5%/83.5% vs. 77.6%/22.4% by XPS), lower band gaps (1.51–1.52 vs. 1.55–1.56 eV), and larger grains. Device efficiency increased from 1.61 ± 0.68% (1.0 M) to 4.53 ± 0.91% (0.9 M), with the best cell reaching 5.91%—about 85% of our MAPbI3 control (6.96%). After one month of storage, 0.9 M cells retained 61% efficiency compared to 37% for 1.0 M devices. These findings demonstrate that a simple reduction in precursor molarity can substantially suppress Sn4+ formation during ambient fabrication, providing a practical route for laboratories without controlled atmospheres. Full article
(This article belongs to the Special Issue Advances in Optoelectronic Materials)
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21 pages, 5539 KB  
Article
Study of 2-Benzylidene-1-indanone Derivatives as Electrodes
by María Elena Sánchez Vergara, Ricardo Ballinas-Indili, Naomi Itzel Medina Morales, Emilio Iván Sandoval Plata, Ruben A. Toscano and Cecilio Álvarez Toledano
Crystals 2026, 16(2), 136; https://doi.org/10.3390/cryst16020136 - 13 Feb 2026
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Abstract
In this work, indanone derivatives with a triphenylamine core structure (IND-1, IND-2, and IND-3) were studied as prospective electrodes. The indanones were synthesized and characterized for optimal deposition as charge-modulating electrodes. The structural arrangement of compound IND-3 was established, [...] Read more.
In this work, indanone derivatives with a triphenylamine core structure (IND-1, IND-2, and IND-3) were studied as prospective electrodes. The indanones were synthesized and characterized for optimal deposition as charge-modulating electrodes. The structural arrangement of compound IND-3 was established, and the structure crystallized in a P21/c monoclinic space group. The electrodes were evaluated for reflectance and band gaps of direct and indirect transitions. Indanones show optical band gap values in the range of 2.46 and 2.86 eV. These values were compared with those obtained theoretically by means of DFT, from which the HOMO and LUMO molecular orbitals were also calculated. To evaluate the indanone response, photoactive devices with indanone-derivative electrodes and copper phthalocyanine as a photoactive electrode were fabricated. Cyclic voltammetry (CV) was conducted using a two-electrode arrangement, within a potential range of −0.1 to 1 V, a step of 10 mV, and a scan rate of 0.1 V/s. The transported current is around 10−1–104 µA, and CV revealed distinct behaviors related to each kind of indanone. Finally, the electrodes were removed from each device and analyzed by IR spectroscopy, demonstrating that they did not undergo degradation during operation and can continue to be used for the manufacture of other devices. Full article
(This article belongs to the Special Issue Advances in Optoelectronic Materials)
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