Power Electronics Based on Wide Bandgap Semiconductors
A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Electrical, Electronics and Communications Engineering".
Deadline for manuscript submissions: closed (20 July 2026) | Viewed by 545
Editor
Interests: power electronics; wireless power transfer; machines and drives; electric vehicle technologies
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Power electronics is experiencing a revolutionary transformation driven by the rapid adoption of wide bandgap (WBG) semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN). These next-generation materials surpass conventional silicon in critical performance metrics, unlocking unprecedented efficiency and power density in modern electronic systems. WBG semiconductors exhibit exceptional properties, including higher breakdown electric fields, superior thermal conductivity, and ultra-fast switching capabilities, which collectively enable significant reductions in energy losses, heat dissipation, and system footprint.
The unique characteristics of SiC and GaN are paving the way for breakthroughs in high-voltage, high-frequency, and high-temperature applications, making them indispensable in cutting-edge technologies such as electric vehicles (EVs), renewable energy systems, aerospace power electronics, and next-generation industrial drives. Furthermore, their ability to operate under extreme conditions while maintaining efficiency positions them as key enablers for sustainable energy transitions, smart grids, and electrification initiatives worldwide.
Dr. Wei Han
Guest Editor
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Keywords
- device technologies
- packaging and integration
- power converters
- wired/wireless charging
- thermal management
- renewable energy systems
- electric vehicles
- battery management system
- control and modulation
- modelling and optimization
- EMI/EMC
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