Zhang, Y.-Z.; Chen, C.-A.; Hsiao, P.; Li, B.-Y.; Nguyen, V.-K.
Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations. Eng. Proc. 2025, 92, 81.
https://doi.org/10.3390/engproc2025092081
AMA Style
Zhang Y-Z, Chen C-A, Hsiao P, Li B-Y, Nguyen V-K.
Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations. Engineering Proceedings. 2025; 92(1):81.
https://doi.org/10.3390/engproc2025092081
Chicago/Turabian Style
Zhang, Yao-Zhong, Chiung-An Chen, Powen Hsiao, Bo-Yi Li, and Van-Khang Nguyen.
2025. "Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations" Engineering Proceedings 92, no. 1: 81.
https://doi.org/10.3390/engproc2025092081
APA Style
Zhang, Y.-Z., Chen, C.-A., Hsiao, P., Li, B.-Y., & Nguyen, V.-K.
(2025). Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations. Engineering Proceedings, 92(1), 81.
https://doi.org/10.3390/engproc2025092081