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Open AccessArticle

Discovery of BiS2-Based Superconductor and Material Design Concept

Department of Electrical and Electronic Engineering, Tokyo Metropolitan University, 1-1 Minami-osawa, Hachioji 192-0397, Japan
Condens. Matter 2017, 2(1), 6; https://doi.org/10.3390/condmat2010006
Received: 25 November 2016 / Accepted: 26 January 2017 / Published: 31 January 2017
(This article belongs to the Special Issue Layered Superconductors)
In 2012, we discovered new layered superconductors whose superconducting states emerge in the BiS2 layers. Since their crystal structure, composed of alternate stacks of BiS2 conduction layers and electrically insulating (blocking) layers, is similar to those of cuprate and Fe-based superconductors, many researchers have explored new BiS2-based superconductors and have studied the physical and chemical properties of the BiS2-based superconductors. In this paper, we present the histories of the discovery of the first BiS2-based superconductor, Bi4O4S3, and the second one, LaO1−xFxBiS2. The structural variation of the BiS2-based superconductor family is briefly introduced. Then, we show the material design concept for the emergence of bulk superconductivity in BiS2-based compounds. At the end, a possible strategy for the enhancement of the transition temperature in the BiS2-based superconductors is proposed. View Full-Text
Keywords: new superconductor; layered superconductor; BiS2-based superconductor; pressure effect; chemical pressure effect new superconductor; layered superconductor; BiS2-based superconductor; pressure effect; chemical pressure effect
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MDPI and ACS Style

Mizuguchi, Y. Discovery of BiS2-Based Superconductor and Material Design Concept. Condens. Matter 2017, 2, 6. https://doi.org/10.3390/condmat2010006

AMA Style

Mizuguchi Y. Discovery of BiS2-Based Superconductor and Material Design Concept. Condensed Matter. 2017; 2(1):6. https://doi.org/10.3390/condmat2010006

Chicago/Turabian Style

Mizuguchi, Yoshikazu. 2017. "Discovery of BiS2-Based Superconductor and Material Design Concept" Condens. Matter 2, no. 1: 6. https://doi.org/10.3390/condmat2010006

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