March 2017 - 12 articles
In this paper, we analyzed the ultrafast transient transport in n-doped ZnS in wurtzite and zincblende phases, driven far away from equilibrium by an electric field. Through the numerical solution of associate quantum transport equations based on the...
Black phosphorous (BP) is one of the important emerging two-dimensional systems. We have undertaken a structural investigation of BP in the temperature range of 320 K to 85 K using synchrotron X-ray diffraction (XRD) studies. The XRD pattern of BP is...
VO2 is a transition metal oxide in which complex electronic phases appear near the metal-to-insulator transition due to electron correlation and electron–lattice interactions. This system is characterized by a metal-to-insulator transition (MIT) at a...
Deposition of an SnO2 thin film was carried out by sol–gel-dip-coating and doped with Ce3+ or Eu3+, and a GaAs layer was deposited by resistive evaporation or sputtering. This investigation combines the emission properties of these rare-earth ions wi...
A spaser consists of a plasmonic noble-metal nanostructure that acts as nanocavity, when incorporated or surface-coupled two-level emitters constitute the nanoscale gain medium. Suited two-level emitters are, for instance, laser dyes. Optical pumping...
In 2012, we discovered new layered superconductors whose superconducting states emerge in the BiS2 layers. Since their crystal structure, composed of alternate stacks of BiS2 conduction layers and electrically insulating (blocking) layers, is similar...
Motivated by diffraction experiments on the (2√3 x √3) R30◦ reconstructed Si(111) surface due to deposition of rare earth elements (Dy, Tb) and silicide formation, we analyse the splitting and non-splitting of superstructure diffraction spots. For th...
In 2012, a novel superconductor BaTi2Sb2O was found in the layered titanium pnictide oxides ATi2Pn2O. A related superconductor BaTi2Bi2O was subsequently discovered in 2013. The structure of these materials consists of alternate stacking of supercond...
The editors of Condensed Matter would like to express their sincere gratitude to the following reviewers for assessing manuscripts in 2016.[...]
It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a ~2.3% compressive lattice mismatch of the deposited ZnO. The question a...
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