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Equivalent Circuit Model of High-Performance VCSELs

1
ECCE Department, Faculty of Engineering, Notre Dame University, P.O. Box 72 Zouk Mikael, Lebanon
2
Institute of Solid State Physics and Center of Nanophotonics, Technical University of Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
*
Author to whom correspondence should be addressed.
Photonics 2020, 7(1), 13; https://doi.org/10.3390/photonics7010013
Received: 12 December 2019 / Revised: 11 January 2020 / Accepted: 15 January 2020 / Published: 18 January 2020
(This article belongs to the Special Issue Semiconductor Laser Dynamics: Fundamentals and Applications)
In this work, a general equivalent circuit model based on the carrier reservoir splitting approach in high-performance multi-mode vertical-cavity surface-emitting lasers (VCSELs) is presented. This model accurately describes the intrinsic dynamic behavior of these VCSELs for the case where the lasing modes do not share a common carrier reservoir. Moreover, this circuit model is derived from advanced multi-mode rate equations that take into account the effect of spatial hole-burning, gain compression, and inhomogeneity in the carrier distribution between the lasing mode ensembles. The validity of the model is confirmed through simulation of the intrinsic modulation response of these lasers. View Full-Text
Keywords: high-speed VCSELs; multi-mode VCSELs; intrinsic laser dynamics; equivalent circuit modeling; intrinsic modulation response high-speed VCSELs; multi-mode VCSELs; intrinsic laser dynamics; equivalent circuit modeling; intrinsic modulation response
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MDPI and ACS Style

Bou Sanayeh, M.; Hamad, W.; Hofmann, W. Equivalent Circuit Model of High-Performance VCSELs. Photonics 2020, 7, 13.

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