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Photonics 2018, 5(2), 10; https://doi.org/10.3390/photonics5020010

Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

1
National Research Council, Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, I-00156 Rome, Italy
2
Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 5, I-00185 Roma, Italy
3
Department of Physics and Astronomy, University of Florence, via Sansone 1, I-50019 Sesto Fiorentino (FI), Italy
*
Author to whom correspondence should be addressed.
Received: 9 April 2018 / Revised: 4 May 2018 / Accepted: 11 May 2018 / Published: 15 May 2018
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Abstract

We review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN). In such systems, the formation of stable N-H complexes removes the effects that nitrogen has on the alloy properties, thus enabling the in-plane engineering of the band bap energy of the system. Both a lithographic approach and/or a near-field optical illumination—coupled to the ultra-sharp diffusion profile of H in dilute nitrides—allow us to control the hydrogen implantation and/or removal on a nanometer scale. This, eventually, makes it possible to fabricate site-controlled quantum dots that are able to emit single photons on demand. The strategy for a deterministic spatial and spectral coupling of such quantum emitters with photonic crystal cavities is also presented. View Full-Text
Keywords: site-controlled QD; nanophotonics; photonic crystals; hydrogen in semiconductors; dilute nitrides; quantum optics site-controlled QD; nanophotonics; photonic crystals; hydrogen in semiconductors; dilute nitrides; quantum optics
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Pettinari, G.; Felici, M.; Biccari, F.; Capizzi, M.; Polimeni, A. Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities. Photonics 2018, 5, 10.

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