Monte Carlo Simulation for Electron Dynamics in Semiconductor Devices

Mustafa Akarsu; Ömer Özbaş

doi:10.3390/mca10010019

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1 April 2005

Monte Carlo Simulation for Electron Dynamics in Semiconductor Devices

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Osmangazi University, Physics Department, 26480, Eskişehir-TURKEY

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Math. Comput. Appl.2005, 10(1), 19-26;https://doi.org/10.3390/mca10010019

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Abstract

The single-particle Monte Carlo simulation for the electron transport in semiconductor devices is presented. The Monte Carlo method is briefly compared with alternative theoretical techniques. Flowchart of the simulation program is given and selections of free flight time, scattering mechanism and electron wave vector are explained. Determination of mean electron velocity and energy is presented.

Keywords:

Monte Carlo Method; Semiconductor Devices; Electron Transport

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