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Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

Chemical Engineering Department, Yeungnam University, Gyeongsan 38541, Korea
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Processes 2020, 8(9), 1077; https://doi.org/10.3390/pr8091077
Received: 17 July 2020 / Revised: 21 August 2020 / Accepted: 28 August 2020 / Published: 1 September 2020
(This article belongs to the Section Materials Processes)
Here, we report a successfully modified Czochralski process system by introducing the cooling system and subsequent examination of the results using crystal growth simulation analysis. Two types of cooling system models have been designed, i.e., long type and double type cooling design (LTCD and DTCD) and their production quality of monocrystalline silicon ingot was compared with that of the basic type cooling design (BTCD) system. The designed cooling system improved the uniformity of the temperature gradient in the crystal and resulted in the significant decrease of the thermal stress. Moreover, the silicon monocrystalline ingot growth rate has been enhanced to 18% by using BTCD system. The detailed simulation results have been discussed in the manuscript. The present research demonstrates that the proposed cooling system would stand as a promising technique to be applied in CZ-Si crystal growth with a large size/high pulling rate. View Full-Text
Keywords: single crystal silicon; cooling system design; pulling speed; crystal growth rate; Czochralski process; crystal growth simulation single crystal silicon; cooling system design; pulling speed; crystal growth rate; Czochralski process; crystal growth simulation
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MDPI and ACS Style

Jeon, H.J.; Park, H.; Koyyada, G.; Alhammadi, S.; Jung, J.H. Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation. Processes 2020, 8, 1077. https://doi.org/10.3390/pr8091077

AMA Style

Jeon HJ, Park H, Koyyada G, Alhammadi S, Jung JH. Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation. Processes. 2020; 8(9):1077. https://doi.org/10.3390/pr8091077

Chicago/Turabian Style

Jeon, Hye J., Hyeonwook Park, Ganesh Koyyada, Salh Alhammadi, and Jae H. Jung 2020. "Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation" Processes 8, no. 9: 1077. https://doi.org/10.3390/pr8091077

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