Sun, Y.; Gao, H.; Hu, S.; Liu, Z.; Li, X.; Liu, Y.; Shi, Y.
Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor. Processes 2022, 10, 1198.
https://doi.org/10.3390/pr10061198
AMA Style
Sun Y, Gao H, Hu S, Liu Z, Li X, Liu Y, Shi Y.
Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor. Processes. 2022; 10(6):1198.
https://doi.org/10.3390/pr10061198
Chicago/Turabian Style
Sun, Yabin, Hengbin Gao, Shaojian Hu, Ziyu Liu, Xiaojin Li, Yun Liu, and Yanling Shi.
2022. "Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor" Processes 10, no. 6: 1198.
https://doi.org/10.3390/pr10061198
APA Style
Sun, Y., Gao, H., Hu, S., Liu, Z., Li, X., Liu, Y., & Shi, Y.
(2022). Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor. Processes, 10(6), 1198.
https://doi.org/10.3390/pr10061198