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Application of a Stub-Loaded Square Ring Resonator for Wideband Bandpass Filter Design
Open AccessArticle

A Compact UWB Bandpass Chip Filter on a GaAs Substrate with Modified Chebyshev Structure

1
College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2
School of Electronic & Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China
*
Authors to whom correspondence should be addressed.
Electronics 2020, 9(2), 313; https://doi.org/10.3390/electronics9020313
Received: 8 December 2019 / Revised: 21 January 2020 / Accepted: 8 February 2020 / Published: 11 February 2020
(This article belongs to the Special Issue RF/Mm-Wave Circuits Design and Applications)
Ultra-Wideband (UWB) systems are widely used in low-power, high-speed, high-security short-range wireless communication systems throughout digital homes and offices. In the RF front-end of a UWB system, bandpass filters (BPFs) are used to put through the passband signals and reject the stopband signals. Most UWB BPFs are designed with dielectric materials on circuit boards or LTCC technology. In this paper, a very compact fully integrated UWB chip filter is proposed and designed on a GaAs substrate with nitride as dielectric layers to meet the small size requirement of portable devices for next-generation UWB applications. The filter is constructed with a modified Chebyshev structure. The final filter circuit contains only four inductors instead of six for the conventional Chebyshev filter, which makes the chip more compact and cost effective. The filter is designed and fabricated on a 0.25 μm GaAs pHEMT technology with a chip size of only 0.73 mm × 0.51 mm including the chip edge and scribe line area, while the filter core area is only 0.61 mm × 0.39 mm, including bonding PADs. The measurement results illustrated that the proposed BPF shows a passband covering the frequency range of 3.1–9.0 GHz, the minimum passband insertion loss is only 1.5 dB, the stopband rejection is better than −30 dB throughout frequencies below 2 GHz and above 12 GHz, S11 is less than −16 dB, and S22 is better than −11 dB during the whole passband range. It demonstrated that the proposed filter can be considered as one of the most compact UWB filters.
Keywords: ultra-wideband; bandpass filter; on-chip elements; Chebyshev structure; GaAs pHEMT ultra-wideband; bandpass filter; on-chip elements; Chebyshev structure; GaAs pHEMT
MDPI and ACS Style

Hu, S.; Hu, Y.; Gao, Y.; Zhang, X.; Zhang, X.; Wang, Z.; Zhou, B.; Cai, Z.; Guo, Y. A Compact UWB Bandpass Chip Filter on a GaAs Substrate with Modified Chebyshev Structure. Electronics 2020, 9, 313.

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