Yang, X.; Cheng, Z.; Yu, Z.; Jia, L.; Zhang, L.; Zhang, Y.
The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes. Electronics 2020, 9, 282.
https://doi.org/10.3390/electronics9020282
AMA Style
Yang X, Cheng Z, Yu Z, Jia L, Zhang L, Zhang Y.
The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes. Electronics. 2020; 9(2):282.
https://doi.org/10.3390/electronics9020282
Chicago/Turabian Style
Yang, Xiuxia, Zhe Cheng, Zhiguo Yu, Lifang Jia, Lian Zhang, and Yun Zhang.
2020. "The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes" Electronics 9, no. 2: 282.
https://doi.org/10.3390/electronics9020282
APA Style
Yang, X., Cheng, Z., Yu, Z., Jia, L., Zhang, L., & Zhang, Y.
(2020). The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes. Electronics, 9(2), 282.
https://doi.org/10.3390/electronics9020282