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Open AccessArticle

Design of a 335 GHz Frequency Multiplier Source Based on Two Schemes

1
Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
2
School of Computer Science, University of Chinese Academy of Sciences, Beijing 100049, China
3
Laboratory of Microwave, School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(9), 948; https://doi.org/10.3390/electronics8090948
Received: 3 July 2019 / Revised: 22 August 2019 / Accepted: 25 August 2019 / Published: 28 August 2019
(This article belongs to the Special Issue Terahertz Technology and Its Applications)
Based on a W-band high-power source, two schemes are proposed to realize a 335 GHz frequency multiplier source. The first scheme involves producing a 335 GHz signal with a two-stage doubler. The first doubler adopts two-way power-combined technology and the second stage is a 335 GHz doubler using a balanced circuit to suppress the odd harmonics. The measured output power was about 17.9 and 1.5 dBm at 167.5 and 335 GHz, respectively. The other scheme involves producing a 335 GHz signal with a single-stage quadrupler built on 50 µm thick quartz circuit adopting an unbalanced structure. The advantage of the unbalanced structure is that it can provide bias to the diodes without an on-chip capacitor, which is hard to realize with discrete devices. The measured output power was about 5.8 dBm at 337 GHz when driven with 22.9 dBm. Such 335 GHz frequency multiplier sources are widely used in terahertz imaging, radiometers, and so on. View Full-Text
Keywords: cascaded doubler; quadrupler; Schottky varactor; hybrid integrated circuit cascaded doubler; quadrupler; Schottky varactor; hybrid integrated circuit
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MDPI and ACS Style

Meng, J.; Zhang, D.; Ji, G.; Yao, C.; Jiang, C.; Liu, S. Design of a 335 GHz Frequency Multiplier Source Based on Two Schemes. Electronics 2019, 8, 948.

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