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Open AccessArticle

Single Event Transients in CMOS Ring Oscillators

Department of Electrical Engineering (ESAT), KU Leuven, 3000 Leuven, Belgium
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Electronics 2019, 8(6), 618; https://doi.org/10.3390/electronics8060618
Received: 28 April 2019 / Revised: 24 May 2019 / Accepted: 29 May 2019 / Published: 1 June 2019
(This article belongs to the Special Issue Radiation Tolerant Electronics)
In this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and verified experimentally with a Two-Photon Absorption (TPA) laser setup. The experiments are done using a 65 nm CMOS test chip. View Full-Text
Keywords: Single-Event Upsets (SEUs); radiation effects; Ring Oscillators; Impulse Sensitive Function; Radiation Hardening by Design Single-Event Upsets (SEUs); radiation effects; Ring Oscillators; Impulse Sensitive Function; Radiation Hardening by Design
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Prinzie, J.; De Smedt, V. Single Event Transients in CMOS Ring Oscillators. Electronics 2019, 8, 618.

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