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Identifying Near-Perfect Tunneling in Discrete Metamaterial Loaded Waveguides

Lincoln Agritech Ltd., Canterbury 7640, New Zealand
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Electronics 2019, 8(1), 84; https://doi.org/10.3390/electronics8010084
Received: 25 October 2018 / Revised: 20 December 2018 / Accepted: 3 January 2019 / Published: 11 January 2019
(This article belongs to the Special Issue Engineering Metamaterials)
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Abstract

Mu-negative and epsilon-negative loaded waveguides taken on their own are nominally cut-off. In ideal circumstances, and when paired in the correct proportions, tunneling will occur. However, due to losses and constraints imposed by finite-sized constituent elements, the ability to experimentally demonstrate tunneling may be hindered. A tunnel identification method has been developed and demonstrated to reveal tunneling behavior that is otherwise obscured. Using ABCD (voltage-current transmission) matrix formulation, the S-parameters of the mu-negative/epsilon-negative loaded waveguide junction is combined with S-parameters of an epsilon-negative loaded waveguide. The method yields symmetric scattering matrices, which allows the effect of losses to be removed to provide yet clearer identification of tunneling. View Full-Text
Keywords: evanescent field tunneling; metamaterials; mu-negative material; epsilon-negative material; split-ring-resonators; waveguides evanescent field tunneling; metamaterials; mu-negative material; epsilon-negative material; split-ring-resonators; waveguides
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Eccleston, K.W.; Platt, I.G. Identifying Near-Perfect Tunneling in Discrete Metamaterial Loaded Waveguides. Electronics 2019, 8, 84.

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