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Open AccessArticle

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

1
The School of Automation on Science and Electrical Engineering, Beihang University, Beijing 100191, China
2
The School of Electrical Engineering, Shenyang University of Technology, Shenyang 110870, China
*
Author to whom correspondence should be addressed.
Electronics 2018, 7(8), 126; https://doi.org/10.3390/electronics7080126
Received: 5 July 2018 / Revised: 19 July 2018 / Accepted: 19 July 2018 / Published: 24 July 2018
Silicon Carbide (SiC)-based Bi-Directional Switches (BDS) have great potential in the construction of several power electronic circuits including multi-level converters, solid-state breakers, matrix converters, HERIC (high efficient and reliable inverter concept) photovoltaic grid-connected inverters and so on. In this paper, two issues with the application of SiC-based BDSs, namely, unwanted turn-on and parasitic oscillation, are deeply investigated. To eliminate unwanted turn-on, it is proposed to add a capacitor (CX) paralleled at the signal input port of the driver IC (integrated circuit) and the capacitance range of CX is also analytically derived to guide the selection of CX. To mitigate parasitic oscillation, a combinational method, which combines a snubber capacitor (CJ) paralleled with the JFET (Junction Field Effect Transistor) and a ferrite ring connected in series with the power line, is proposed. It is verified that the use of CJ mainly improves the turn-off transient and the use of a ferrite ring damps the current oscillation during the turn-on transient significantly. The effects of the proposed methods have been demonstrated by theoretical analysis and verified by experimental results. View Full-Text
Keywords: SiC JFET; bi-directional switches; cascode-light; unwanted turn-on; parasitic oscillation SiC JFET; bi-directional switches; cascode-light; unwanted turn-on; parasitic oscillation
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MDPI and ACS Style

Wang, L.; Yang, J.; Ma, H.; Wang, Z.; Olanrewaju, K.O.; Kerrouche, K.D.E. Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches. Electronics 2018, 7, 126. https://doi.org/10.3390/electronics7080126

AMA Style

Wang L, Yang J, Ma H, Wang Z, Olanrewaju KO, Kerrouche KDE. Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches. Electronics. 2018; 7(8):126. https://doi.org/10.3390/electronics7080126

Chicago/Turabian Style

Wang, Lina; Yang, Junyi; Ma, Haobo; Wang, Zeyuan; Olanrewaju, Kabir O.; Kerrouche, Kamel D.E. 2018. "Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches" Electronics 7, no. 8: 126. https://doi.org/10.3390/electronics7080126

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