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Journal: ElectronicsVolume: 7Number: 210
Article: DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs
  • Authors:
  • Raúl Rodríguez1,
  • Benito González1,* and
  • Javier García1
  • et al.
Link: https://www.mdpi.com/2079-9292/7/10/210

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