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Journal: Electronics, 2018
Volume: 7
Number: 210
Article:
DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs
Authors:
by
Raúl RodrÃguez, Benito González, Javier GarcÃa, Gaetan Toulon, Frédéric Morancho and Antonio Núñez
Link:
https://www.mdpi.com/2079-9292/7/10/210
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