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Electronics 2017, 6(4), 103;

X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

Department of Radio Science and Engineering, Chungnam National University, Daejeon 34134, Korea
RFcore Co., Ltd., #C-708, Pundang Techno-Park, 744 Pangyo-ro, Yatap-dong, Pundang-gu, Sungnam, Gyeonggi 13510, Korea
Author to whom correspondence should be addressed.
Received: 21 November 2017 / Revised: 24 November 2017 / Accepted: 24 November 2017 / Published: 28 November 2017
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This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE) using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor’s extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC) occupies an area of 13.26 mm2, and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz. View Full-Text
Keywords: X-band; GaN; HEMT; power amplifier; MMIC; harmonic-tuned X-band; GaN; HEMT; power amplifier; MMIC; harmonic-tuned

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Bae, K.-T.; Lee, I.-J.; Kang, B.; Sim, S.; Jeon, L.; Kim, D.-W. X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit. Electronics 2017, 6, 103.

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