Order Article Reprints

Meneghini M, Rossetto I, Rizzato V, Stoffels S, Van Hove M, Posthuma N, Wu T-L, Marcon D, Decoutere S, Meneghesso G, et al. Gate Stability of GaN-Based HEMTs with P-Type Gate. Electronics. 2016; 5(2):14. https://doi.org/10.3390/electronics5020014

Meneghini, Matteo, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, and et al. 2016. "Gate Stability of GaN-Based HEMTs with P-Type Gate" Electronics 5, no. 2: 14. https://doi.org/10.3390/electronics5020014

Meneghini, M., Rossetto, I., Rizzato, V., Stoffels, S., Van Hove, M., Posthuma, N., Wu, T.-L., Marcon, D., Decoutere, S., Meneghesso, G., & Zanoni, E. (2016). Gate Stability of GaN-Based HEMTs with P-Type Gate. Electronics, 5(2), 14. https://doi.org/10.3390/electronics5020014