D’Aniello, F.; Tettamanti, M.; Shah, S.A.A.; Mattiazzo, S.; Bonaldo, S.; Vadalà , V.; Baschirotto, A.
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology. Electronics 2025, 14, 1421.
https://doi.org/10.3390/electronics14071421
AMA Style
D’Aniello F, Tettamanti M, Shah SAA, Mattiazzo S, Bonaldo S, Vadalà V, Baschirotto A.
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology. Electronics. 2025; 14(7):1421.
https://doi.org/10.3390/electronics14071421
Chicago/Turabian Style
D’Aniello, Federico, Marcello Tettamanti, Syed Adeel Ali Shah, Serena Mattiazzo, Stefano Bonaldo, Valeria Vadalà , and Andrea Baschirotto.
2025. "Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology" Electronics 14, no. 7: 1421.
https://doi.org/10.3390/electronics14071421
APA Style
D’Aniello, F., Tettamanti, M., Shah, S. A. A., Mattiazzo, S., Bonaldo, S., Vadalà , V., & Baschirotto, A.
(2025). Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology. Electronics, 14(7), 1421.
https://doi.org/10.3390/electronics14071421