Chen, K.; Peng, R.; Huang, S.; Wang, L.; Zhu, J.; Duan, E.; Zhang, B.; Zhou, Q.
Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects. Electronics 2025, 14, 1321.
https://doi.org/10.3390/electronics14071321
AMA Style
Chen K, Peng R, Huang S, Wang L, Zhu J, Duan E, Zhang B, Zhou Q.
Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects. Electronics. 2025; 14(7):1321.
https://doi.org/10.3390/electronics14071321
Chicago/Turabian Style
Chen, Kuangli, Rong Peng, Shuting Huang, Long Wang, Jianggen Zhu, Enchuan Duan, Bo Zhang, and Qi Zhou.
2025. "Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects" Electronics 14, no. 7: 1321.
https://doi.org/10.3390/electronics14071321
APA Style
Chen, K., Peng, R., Huang, S., Wang, L., Zhu, J., Duan, E., Zhang, B., & Zhou, Q.
(2025). Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects. Electronics, 14(7), 1321.
https://doi.org/10.3390/electronics14071321