Zheng, H.; Ye, Z.; Liu, B.; Wang, M.; Zhang, L.; Liu, C.
Dual-Gate Metal-Oxide-Semiconductor Transistors: Nanoscale Channel Length Scaling and Performance Optimization. Electronics 2025, 14, 1257.
https://doi.org/10.3390/electronics14071257
AMA Style
Zheng H, Ye Z, Liu B, Wang M, Zhang L, Liu C.
Dual-Gate Metal-Oxide-Semiconductor Transistors: Nanoscale Channel Length Scaling and Performance Optimization. Electronics. 2025; 14(7):1257.
https://doi.org/10.3390/electronics14071257
Chicago/Turabian Style
Zheng, Huajian, Zhuohang Ye, Baiquan Liu, Mengye Wang, Li Zhang, and Chuan Liu.
2025. "Dual-Gate Metal-Oxide-Semiconductor Transistors: Nanoscale Channel Length Scaling and Performance Optimization" Electronics 14, no. 7: 1257.
https://doi.org/10.3390/electronics14071257
APA Style
Zheng, H., Ye, Z., Liu, B., Wang, M., Zhang, L., & Liu, C.
(2025). Dual-Gate Metal-Oxide-Semiconductor Transistors: Nanoscale Channel Length Scaling and Performance Optimization. Electronics, 14(7), 1257.
https://doi.org/10.3390/electronics14071257