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Zhou X, Sun P, Li K, Liu Q, Chen L, Wang B. A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing. Electronics. 2025; 14(4):771. https://doi.org/10.3390/electronics14040771

Zhou, Xinghao, Pengju Sun, Kaiwei Li, Qingsong Liu, Lan Chen, and Bo Wang. 2025. "A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing" Electronics 14, no. 4: 771. https://doi.org/10.3390/electronics14040771

Zhou, X., Sun, P., Li, K., Liu, Q., Chen, L., & Wang, B. (2025). A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing. Electronics, 14(4), 771. https://doi.org/10.3390/electronics14040771