Choi, S.; Kang, M.; Jung, H.-s.; Kim, Y.; Song, Y.-h.
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications. Electronics 2024, 13, 889.
https://doi.org/10.3390/electronics13050889
AMA Style
Choi S, Kang M, Jung H-s, Kim Y, Song Y-h.
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications. Electronics. 2024; 13(5):889.
https://doi.org/10.3390/electronics13050889
Chicago/Turabian Style
Choi, Seonjun, Myounggon Kang, Hong-sik Jung, Yuri Kim, and Yun-heub Song.
2024. "An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications" Electronics 13, no. 5: 889.
https://doi.org/10.3390/electronics13050889
APA Style
Choi, S., Kang, M., Jung, H.-s., Kim, Y., & Song, Y.-h.
(2024). An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications. Electronics, 13(5), 889.
https://doi.org/10.3390/electronics13050889