Wu, C.; Li, J.; Li, Z.; Zhang, L.; Zhou, K.; Deng, X.
Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure. Electronics 2024, 13, 786.
https://doi.org/10.3390/electronics13040786
AMA Style
Wu C, Li J, Li Z, Zhang L, Zhou K, Deng X.
Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure. Electronics. 2024; 13(4):786.
https://doi.org/10.3390/electronics13040786
Chicago/Turabian Style
Wu, Chengcheng, Juntao Li, Zhiqiang Li, Lin Zhang, Kun Zhou, and Xiaochuan Deng.
2024. "Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure" Electronics 13, no. 4: 786.
https://doi.org/10.3390/electronics13040786
APA Style
Wu, C., Li, J., Li, Z., Zhang, L., Zhou, K., & Deng, X.
(2024). Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure. Electronics, 13(4), 786.
https://doi.org/10.3390/electronics13040786