Article Versions Notes

Wang H, Chen K, Yang N, Zhu J, Duan E, Huang S, Zhao Y, Zhang B, Zhou Q. A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits. Electronics. 2024; 13(4):729. https://doi.org/10.3390/electronics13040729

Wang, Haochen, Kuangli Chen, Ning Yang, Jianggen Zhu, Enchuan Duan, Shuting Huang, Yishang Zhao, Bo Zhang, and Qi Zhou. 2024. "A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits" Electronics 13, no. 4: 729. https://doi.org/10.3390/electronics13040729

Wang, H., Chen, K., Yang, N., Zhu, J., Duan, E., Huang, S., Zhao, Y., Zhang, B., & Zhou, Q. (2024). A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits. Electronics, 13(4), 729. https://doi.org/10.3390/electronics13040729