Dong, Z.; Jiang, L.; Su, M.; Zeng, C.; Liu, H.; Li, B.; Sun, Y.; Cui, Q.; Zeng, Z.; Zhang, B.
The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor. Electronics 2024, 13, 596.
https://doi.org/10.3390/electronics13030596
AMA Style
Dong Z, Jiang L, Su M, Zeng C, Liu H, Li B, Sun Y, Cui Q, Zeng Z, Zhang B.
The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor. Electronics. 2024; 13(3):596.
https://doi.org/10.3390/electronics13030596
Chicago/Turabian Style
Dong, Zhihua, Leifeng Jiang, Manqi Su, Chunhong Zeng, Hui Liu, Botong Li, Yuhua Sun, Qi Cui, Zhongming Zeng, and Baoshun Zhang.
2024. "The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor" Electronics 13, no. 3: 596.
https://doi.org/10.3390/electronics13030596
APA Style
Dong, Z., Jiang, L., Su, M., Zeng, C., Liu, H., Li, B., Sun, Y., Cui, Q., Zeng, Z., & Zhang, B.
(2024). The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor. Electronics, 13(3), 596.
https://doi.org/10.3390/electronics13030596
