Shi, L.; Qian, J.; Jin, M.; Bhattacharya, M.; Houshmand, S.; Yu, H.; Shimbori, A.; White, M.H.; Agarwal, A.K.
Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress. Electronics 2024, 13, 4516.
https://doi.org/10.3390/electronics13224516
AMA Style
Shi L, Qian J, Jin M, Bhattacharya M, Houshmand S, Yu H, Shimbori A, White MH, Agarwal AK.
Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress. Electronics. 2024; 13(22):4516.
https://doi.org/10.3390/electronics13224516
Chicago/Turabian Style
Shi, Limeng, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Shiva Houshmand, Hengyu Yu, Atsushi Shimbori, Marvin H. White, and Anant K. Agarwal.
2024. "Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress" Electronics 13, no. 22: 4516.
https://doi.org/10.3390/electronics13224516
APA Style
Shi, L., Qian, J., Jin, M., Bhattacharya, M., Houshmand, S., Yu, H., Shimbori, A., White, M. H., & Agarwal, A. K.
(2024). Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress. Electronics, 13(22), 4516.
https://doi.org/10.3390/electronics13224516
