Kita, H.; Uno, K.; Matsuda, T.; Kawanishi, H.; Kimura, M.
Spike-Timing-Dependent Plasticity Device with Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method. Electronics 2024, 13, 3413.
https://doi.org/10.3390/electronics13173413
AMA Style
Kita H, Uno K, Matsuda T, Kawanishi H, Kimura M.
Spike-Timing-Dependent Plasticity Device with Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method. Electronics. 2024; 13(17):3413.
https://doi.org/10.3390/electronics13173413
Chicago/Turabian Style
Kita, Hidehito, Kazuma Uno, Tokiyoshi Matsuda, Hidenori Kawanishi, and Mutsumi Kimura.
2024. "Spike-Timing-Dependent Plasticity Device with Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method" Electronics 13, no. 17: 3413.
https://doi.org/10.3390/electronics13173413
APA Style
Kita, H., Uno, K., Matsuda, T., Kawanishi, H., & Kimura, M.
(2024). Spike-Timing-Dependent Plasticity Device with Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method. Electronics, 13(17), 3413.
https://doi.org/10.3390/electronics13173413