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Electronics2023, 12(9), 2133;https://doi.org/10.3390/electronics12092133

Journal: ElectronicsVolume: 12Number: 2133

Article: Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals

Authors:
Zhikang Wu^1,2,
Yun Bai^1,* and
Chengyue Yang¹
et al.

Link: https://www.mdpi.com/2079-9292/12/9/2133

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