Wang, S.; Jiang, X.; Bai, F.; Xiao, W.; Long, X.; Ren, Q.; Kang, Y.
A True Process-Heterogeneous Stacked Embedded DRAM Structure Based on Wafer-Level Hybrid Bonding. Electronics 2023, 12, 1077.
https://doi.org/10.3390/electronics12051077
AMA Style
Wang S, Jiang X, Bai F, Xiao W, Long X, Ren Q, Kang Y.
A True Process-Heterogeneous Stacked Embedded DRAM Structure Based on Wafer-Level Hybrid Bonding. Electronics. 2023; 12(5):1077.
https://doi.org/10.3390/electronics12051077
Chicago/Turabian Style
Wang, Song, Xiping Jiang, Fujun Bai, Wenwu Xiao, Xiaodong Long, Qiwei Ren, and Yi Kang.
2023. "A True Process-Heterogeneous Stacked Embedded DRAM Structure Based on Wafer-Level Hybrid Bonding" Electronics 12, no. 5: 1077.
https://doi.org/10.3390/electronics12051077
APA Style
Wang, S., Jiang, X., Bai, F., Xiao, W., Long, X., Ren, Q., & Kang, Y.
(2023). A True Process-Heterogeneous Stacked Embedded DRAM Structure Based on Wafer-Level Hybrid Bonding. Electronics, 12(5), 1077.
https://doi.org/10.3390/electronics12051077