Kim, H.-J.; Lee, I.-G.; Jo, H.-B.; Rho, T.-B.; Tsutsumi, T.; Sugiyama, H.; Matsuzaki, H.; Lee, J.-H.; Kim, T.-W.; Kim, D.-H.
Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate. Electronics 2023, 12, 259.
https://doi.org/10.3390/electronics12020259
AMA Style
Kim H-J, Lee I-G, Jo H-B, Rho T-B, Tsutsumi T, Sugiyama H, Matsuzaki H, Lee J-H, Kim T-W, Kim D-H.
Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate. Electronics. 2023; 12(2):259.
https://doi.org/10.3390/electronics12020259
Chicago/Turabian Style
Kim, Hyo-Jin, In-Geun Lee, Hyeon-Bhin Jo, Tae-Beom Rho, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Tae-Woo Kim, and Dae-Hyun Kim.
2023. "Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate" Electronics 12, no. 2: 259.
https://doi.org/10.3390/electronics12020259
APA Style
Kim, H.-J., Lee, I.-G., Jo, H.-B., Rho, T.-B., Tsutsumi, T., Sugiyama, H., Matsuzaki, H., Lee, J.-H., Kim, T.-W., & Kim, D.-H.
(2023). Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate. Electronics, 12(2), 259.
https://doi.org/10.3390/electronics12020259