Next Article in Journal
Usability and Security Testing of Online Links: A Framework for Click-Through Rate Prediction Using Deep Learning
Next Article in Special Issue
Multiple Dielectric-Supported Ridge-Loaded Rhombus-Shaped Wideband Meander-Line Slow-Wave Structure for a V-Band TWT
Previous Article in Journal
Uncertainty-Based Rejection in Machine Learning: Implications for Model Development and Interpretability
Previous Article in Special Issue
Broadband-Printed Traveling-Wave Tube Based on a Staggered Rings Microstrip Line Slow-Wave Structure
 
 
Article

A Vacuum Transistor Based on Field-Assisted Thermionic Emission from a Multiwalled Carbon Nanotube

Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Academic Editor: Yahya M. Meziani
Electronics 2022, 11(3), 399; https://doi.org/10.3390/electronics11030399
Received: 28 December 2021 / Revised: 23 January 2022 / Accepted: 25 January 2022 / Published: 28 January 2022
(This article belongs to the Special Issue High-Frequency Vacuum Electron Devices)
Vacuum triodes have been scaled down to the microscale on a chip by microfabrication technologies to be vacuum transistors. Most of the reported devices are based on field electron emission, which suffer from the problems of unstable electron emission, poor uniformity, and high requirement for operating vacuum. Here, to overcome these problems, a vacuum transistor based on Field-Assisted thermionic emission from individual carbon nanotubes is proposed and fabricated using microfabrication technologies. The carbon nanotube vacuum transistor exhibits an ON/OFF current ratio as high as 104 and a subthreshold slope of ~4 V·dec−1. The gate controllability is found to be strongly dependent on the distance between the collector electrodes and electron emitter, and a device with the distance of 1.5 μm shows a better gate controllability than that with the distance of 0.5 μm. Benefiting from Field-Assisted thermionic emission mechanism, electric field required in our devices is about one order of magnitude smaller than that in the devices based on field electron emission, and the surface of the emitters shows much less gas molecule absorption than cold field emitters. These are expected to be helpful for improving the stability and uniformity of the devices. View Full-Text
Keywords: vacuum transistors; Field-Assisted thermionic emission; carbon nanotubes; gate controllability vacuum transistors; Field-Assisted thermionic emission; carbon nanotubes; gate controllability
Show Figures

Figure 1

MDPI and ACS Style

He, Y.; Li, Z.; Mao, S.; Zhan, F.; Wei, X. A Vacuum Transistor Based on Field-Assisted Thermionic Emission from a Multiwalled Carbon Nanotube. Electronics 2022, 11, 399. https://doi.org/10.3390/electronics11030399

AMA Style

He Y, Li Z, Mao S, Zhan F, Wei X. A Vacuum Transistor Based on Field-Assisted Thermionic Emission from a Multiwalled Carbon Nanotube. Electronics. 2022; 11(3):399. https://doi.org/10.3390/electronics11030399

Chicago/Turabian Style

He, Yidan, Zhiwei Li, Shuyu Mao, Fangyuan Zhan, and Xianlong Wei. 2022. "A Vacuum Transistor Based on Field-Assisted Thermionic Emission from a Multiwalled Carbon Nanotube" Electronics 11, no. 3: 399. https://doi.org/10.3390/electronics11030399

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop