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Balakirev S, Chernenko N, Kryzhanovskaya N, Shandyba N, Kirichenko D, Dragunova A, Komarov S, Zhukov A, Solodovnik M. Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures. Electronics. 2022; 11(23):4062. https://doi.org/10.3390/electronics11234062

Balakirev, Sergey, Natalia Chernenko, Natalia Kryzhanovskaya, Nikita Shandyba, Danil Kirichenko, Anna Dragunova, Sergey Komarov, Alexey Zhukov, and Maxim Solodovnik. 2022. "Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures" Electronics 11, no. 23: 4062. https://doi.org/10.3390/electronics11234062

Balakirev, S., Chernenko, N., Kryzhanovskaya, N., Shandyba, N., Kirichenko, D., Dragunova, A., Komarov, S., Zhukov, A., & Solodovnik, M. (2022). Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures. Electronics, 11(23), 4062. https://doi.org/10.3390/electronics11234062