Gu, Y.; Yan, D.; Verma, V.; Wang, P.; Stan, M.R.; Zhang, X.
Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors. J. Low Power Electron. Appl. 2018, 8, 28.
https://doi.org/10.3390/jlpea8030028
AMA Style
Gu Y, Yan D, Verma V, Wang P, Stan MR, Zhang X.
Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors. Journal of Low Power Electronics and Applications. 2018; 8(3):28.
https://doi.org/10.3390/jlpea8030028
Chicago/Turabian Style
Gu, Yunfei, Dengxue Yan, Vaibhav Verma, Pai Wang, Mircea R. Stan, and Xuan Zhang.
2018. "Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors" Journal of Low Power Electronics and Applications 8, no. 3: 28.
https://doi.org/10.3390/jlpea8030028
APA Style
Gu, Y., Yan, D., Verma, V., Wang, P., Stan, M. R., & Zhang, X.
(2018). Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors. Journal of Low Power Electronics and Applications, 8(3), 28.
https://doi.org/10.3390/jlpea8030028