Open AccessArticle
Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials
by
Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow and Meishoku Masahara
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Abstract
The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al
2O
3 and SiO
2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (V
t
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The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al
2O
3 and SiO
2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (V
t) variability, and the memory characteristics have been comparatively investigated. It was experimentally found that the better SCE immunity and a larger memory window are obtained by introducing a high-k Al
2O
3 blocking layer instead of a SiO
2 blocking layer. It was also confirmed that the variability of V
t before and after one program/erase (P/E) cycle is almost independent of the blocking layer materials.
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