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Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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The original of this paper had been presented in IEEE S3S Conference 2013.
J. Low Power Electron. Appl. 2014, 4(2), 110-118; https://doi.org/10.3390/jlpea4020110
Received: 28 February 2014 / Revised: 7 May 2014 / Accepted: 16 May 2014 / Published: 23 May 2014
(This article belongs to the Special Issue Selected Papers from IEEE S3S Conference 2013)
A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin). View Full-Text
Keywords: FinFET; SOI; threshold FinFET; SOI; threshold
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Endo, K.; Migita, S.; Ishikawa, Y.; Matsukawa, T.; O'uchi, S.-I.; Tsukada, J.; Mizubayashi, W.; Morita, Y.; Ota, H.; Yamauchi, H.; Masahara, M. Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs. J. Low Power Electron. Appl. 2014, 4, 110-118.

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