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Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B4C/Si Nano-Multilayers
Article

Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings

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Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 avenue des Etats-Unis, CEDEX, 78035 Versailles, France
2
Sir Henry Royce Institute and the Department of Materials, School of Natural Sciences, The University of Manchester, Manchester M13 9PL, UK
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IPVF, Institut Photovoltaïque d’Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
4
HORIBA Scientific, 14 Boulevard Thomas Gobert, Passage Jobin Yvon, CS 45002, 91120 Palaiseau, France
*
Author to whom correspondence should be addressed.
Coatings 2021, 11(6), 702; https://doi.org/10.3390/coatings11060702
Received: 30 April 2021 / Revised: 4 June 2021 / Accepted: 7 June 2021 / Published: 11 June 2021
(This article belongs to the Special Issue Thin and Thick Films: Deposition, Characterization and Applications)
Chemical characterization at buried interfaces is a real challenge, as the physico-chemical processes operating at the interface govern the properties of many systems and devices. We have developed a methodology based on the combined use of pulsed RF GD-OES (pulsed Radio Frequency Glow Discharge Optical Emission Spectrometry) and XPS (X-ray Photoelectron Spectroscopy) to facilitate the access to deeply buried locations (taking advantage of the high profiling rate of the GD-OES) and perform an accurate chemical diagnosis using XPS directly inside the GD crater. The reliability of the chemical information is, however, influenced by a perturbed layer present at the surface of the crater, hindering traditional XPS examination due to a relatively short sampling depth. Sampling below the perturbed layer may, however, can be achieved using a higher energy excitation source with an increased sampling depth, and is enabled here by a new laboratory-based HAXPES (Hard X-ray PhotoElectron Spectroscopy) (Ga-Kα, 9.25 keV). This new approach combining HAXPES with pulsed RF GD-OES requires benchmarking and is here demonstrated and evaluated on InP. The perturbed depth is estimated and the consistency of the chemical information measured is demonstrated, offering a new route for advanced chemical depth profiling through coatings and heterostructures. View Full-Text
Keywords: pulsed RF GD-OES; XPS; HAXPES; depth profiling; crater chemistry; plasma-induced perturbation; InP; metrology; quantitative analyses pulsed RF GD-OES; XPS; HAXPES; depth profiling; crater chemistry; plasma-induced perturbation; InP; metrology; quantitative analyses
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MDPI and ACS Style

Bouttemy, M.; Béchu, S.; Spencer, B.F.; Dally, P.; Chapon, P.; Etcheberry, A. Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings. Coatings 2021, 11, 702. https://doi.org/10.3390/coatings11060702

AMA Style

Bouttemy M, Béchu S, Spencer BF, Dally P, Chapon P, Etcheberry A. Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings. Coatings. 2021; 11(6):702. https://doi.org/10.3390/coatings11060702

Chicago/Turabian Style

Bouttemy, Muriel, Solène Béchu, Ben F. Spencer, Pia Dally, Patrick Chapon, and Arnaud Etcheberry. 2021. "Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings" Coatings 11, no. 6: 702. https://doi.org/10.3390/coatings11060702

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