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Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

State Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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Nanomaterials 2019, 9(7), 981; https://doi.org/10.3390/nano9070981
Received: 15 June 2019 / Revised: 2 July 2019 / Accepted: 2 July 2019 / Published: 6 July 2019
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Abstract

The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires. View Full-Text
Keywords: silicon carbide nanowire; piezoresistive effect; electronic transport; in situ electric measurement; pulse-voltage driving; electron emission silicon carbide nanowire; piezoresistive effect; electronic transport; in situ electric measurement; pulse-voltage driving; electron emission
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Zhao, P.; Zhang, Y.; Tang, S.; Zhan, R.; She, J.; Chen, J.; Xu, N.; Deng, S. Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire. Nanomaterials 2019, 9, 981.

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