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Open AccessArticle

Numerical Study on Mie Resonances in Single GaAs Nanomembranes

Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC) Isaac Newton, 8, Tres Cantos, E-28760 Madrid, Spain
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(6), 856;
Received: 14 May 2019 / Revised: 3 June 2019 / Accepted: 4 June 2019 / Published: 5 June 2019
(This article belongs to the Special Issue Dielectric Nanophotonics and Their Applications)
GaAs nanomembranes grown by selective area epitaxy are novel structures. The high refractive index of GaAs makes them good candidates for nanoantennas. We numerically studied the optical modal structure of the resonator. The nanomembrane geometry introduces a strong light-polarization dependence. The scattering is dominated by an electric dipole contribution for polarization along the nanomembrane long dimension and by a magnetic dipole contribution in the orthogonal direction. The dependence on the geometry of the resonances close to the GaAs band gap was modeled by a single coefficient. It describes the resonance shifts against up-to 40% changes in length, height, and width. We showed that the nanomembranes exhibited field enhancement, far-field directionality, and tunability with the GaAs band gap. All these elements confirm their great potential as nanoantennas. View Full-Text
Keywords: mie resonances; GaAs nanomembranes; dielectric nanophotonics; nanoantennas mie resonances; GaAs nanomembranes; dielectric nanophotonics; nanoantennas
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MDPI and ACS Style

Raya, A.M.; Fuster, D.; Llorens, J.M. Numerical Study on Mie Resonances in Single GaAs Nanomembranes. Nanomaterials 2019, 9, 856.

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