Article Versions Notes

Celebrano M, Ghirardini L, Finazzi M, Ferrari G, Chiba Y, Abdelghafar A, Yano M, Shinada T, Tanii T, Prati E. Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength. Nanomaterials. 2019; 9(3):416. https://doi.org/10.3390/nano9030416

Celebrano, Michele, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takahiro Shinada, Takashi Tanii, and Enrico Prati. 2019. "Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength" Nanomaterials 9, no. 3: 416. https://doi.org/10.3390/nano9030416

Celebrano, M., Ghirardini, L., Finazzi, M., Ferrari, G., Chiba, Y., Abdelghafar, A., Yano, M., Shinada, T., Tanii, T., & Prati, E. (2019). Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength. Nanomaterials, 9(3), 416. https://doi.org/10.3390/nano9030416