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Open AccessArticle

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Via Colombo 81, I-20133 Milano, Italy
School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8572, Japan
Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(3), 416;
Received: 1 February 2019 / Revised: 1 March 2019 / Accepted: 5 March 2019 / Published: 11 March 2019
(This article belongs to the Special Issue Optoelectronic Nanodevices)
An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm2 transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm. View Full-Text
Keywords: erbium; silicon transistor; photocurrent erbium; silicon transistor; photocurrent
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MDPI and ACS Style

Celebrano, M.; Ghirardini, L.; Finazzi, M.; Ferrari, G.; Chiba, Y.; Abdelghafar, A.; Yano, M.; Shinada, T.; Tanii, T.; Prati, E. Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength. Nanomaterials 2019, 9, 416.

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