Next Article in Journal
Enhancement of InN Luminescence by Introduction of Graphene Interlayer
Next Article in Special Issue
Effect of Excitation Wavelength on Optical Performances of Quantum-Dot-Converted Light-Emitting Diode
Previous Article in Journal
Effect of Metal Ions on Hybrid Graphite-Diamond Nanowire Growth: Conductivity Measurements from a Single Nanowire Device
Previous Article in Special Issue
Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall
Open AccessArticle

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

1
Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
2
Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Via Colombo 81, I-20133 Milano, Italy
3
School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
4
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8572, Japan
5
Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(3), 416; https://doi.org/10.3390/nano9030416
Received: 1 February 2019 / Revised: 1 March 2019 / Accepted: 5 March 2019 / Published: 11 March 2019
(This article belongs to the Special Issue Optoelectronic Nanodevices)
An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm2 transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm. View Full-Text
Keywords: erbium; silicon transistor; photocurrent erbium; silicon transistor; photocurrent
Show Figures

Graphical abstract

MDPI and ACS Style

Celebrano, M.; Ghirardini, L.; Finazzi, M.; Ferrari, G.; Chiba, Y.; Abdelghafar, A.; Yano, M.; Shinada, T.; Tanii, T.; Prati, E. Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength. Nanomaterials 2019, 9, 416.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map

1
Back to TopTop