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Nanomaterials 2018, 8(7), 450; https://doi.org/10.3390/nano8070450

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits

1
Key Laboratory of Hydraulic Machinery Transients (Wuhan University), Ministry of Education, Wuhan 430072, China
2
Center for Photonic and Semiconductor, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
*
Author to whom correspondence should be addressed.
Received: 15 May 2018 / Revised: 8 June 2018 / Accepted: 18 June 2018 / Published: 21 June 2018
(This article belongs to the Special Issue Optoelectronic Nanodevices)
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Abstract

Despite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs remains an open question. Here, we investigate the influence of a V-pits-embedded InGaN/GaN SL on optical and electrical properties of GaN-based green LEDs. We recorded a sequence of light emission properties of InGaN/GaN multiple quantum wells (MQWs) grown on a 0- and 24-pair InGaN/GaN SL by using scanning electron microscopy (SEM) in combination with a room temperature cathodoluminescence (CL) measurement, which demonstrated the presence of a potential barrier formed by the V-pits around threading dislocations (TDs). We find that an increase in V-pit diameter would lead to the increase of V-pit potential barrier height. Our experimental data suggest that a V-pits-embedded, 24-pair InGaN/GaN SL can effectively suppress the lateral diffusion of carriers into non-recombination centers. As a result, the external quantum efficiency (EQE) of green LEDs is improved by 29.6% at an injection current of 20 mA after implementing the V-pits-embedded InGaN/GaN SL layer. In addition, a lower reverse leakage current was achieved with larger V-pits. View Full-Text
Keywords: green LEDs; InGaN/GaN superlattice; V-pits; external quantum efficiency green LEDs; InGaN/GaN superlattice; V-pits; external quantum efficiency
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Liu, M.; Zhao, J.; Zhou, S.; Gao, Y.; Hu, J.; Liu, X.; Ding, X. An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits. Nanomaterials 2018, 8, 450.

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