An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
AbstractDespite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs remains an open question. Here, we investigate the influence of a V-pits-embedded InGaN/GaN SL on optical and electrical properties of GaN-based green LEDs. We recorded a sequence of light emission properties of InGaN/GaN multiple quantum wells (MQWs) grown on a 0- and 24-pair InGaN/GaN SL by using scanning electron microscopy (SEM) in combination with a room temperature cathodoluminescence (CL) measurement, which demonstrated the presence of a potential barrier formed by the V-pits around threading dislocations (TDs). We find that an increase in V-pit diameter would lead to the increase of V-pit potential barrier height. Our experimental data suggest that a V-pits-embedded, 24-pair InGaN/GaN SL can effectively suppress the lateral diffusion of carriers into non-recombination centers. As a result, the external quantum efficiency (EQE) of green LEDs is improved by 29.6% at an injection current of 20 mA after implementing the V-pits-embedded InGaN/GaN SL layer. In addition, a lower reverse leakage current was achieved with larger V-pits. View Full-Text
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Liu, M.; Zhao, J.; Zhou, S.; Gao, Y.; Hu, J.; Liu, X.; Ding, X. An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits. Nanomaterials 2018, 8, 450.
Liu M, Zhao J, Zhou S, Gao Y, Hu J, Liu X, Ding X. An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits. Nanomaterials. 2018; 8(7):450.Chicago/Turabian Style
Liu, Mengling; Zhao, Jie; Zhou, Shengjun; Gao, Yilin; Hu, Jinfeng; Liu, Xingtong; Ding, Xinghuo. 2018. "An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits." Nanomaterials 8, no. 7: 450.
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