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Open AccessArticle

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

1
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
3
LatticePower (Jiangxi) Corporation, No. 699 North Aixihu Road, National High-Tech Industrial Development Zone, Nanchang 330029, China
*
Author to whom correspondence should be addressed.
Academic Editor: Thomas Nann
Nanomaterials 2016, 6(11), 195; https://doi.org/10.3390/nano6110195
Received: 7 September 2016 / Revised: 21 October 2016 / Accepted: 25 October 2016 / Published: 29 October 2016
Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials. View Full-Text
Keywords: III-nitrides; nanowires; metal substrates; indium nitride; metal-organic chemical vapor deposition III-nitrides; nanowires; metal substrates; indium nitride; metal-organic chemical vapor deposition
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Li, H.; Zhao, G.; Wang, L.; Chen, Z.; Yang, S. Morphology Controlled Fabrication of InN Nanowires on Brass Substrates. Nanomaterials 2016, 6, 195.

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