Lin, F.; Wu, T.; Wang, W.; Wang, Z.; Zhang, Y.; Li, S.; Ye, R.; Zhang, L.; Wei, J.; Liu, S.;
et al. Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp. Nanomaterials 2025, 15, 172.
https://doi.org/10.3390/nano15030172
AMA Style
Lin F, Wu T, Wang W, Wang Z, Zhang Y, Li S, Ye R, Zhang L, Wei J, Liu S,
et al. Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp. Nanomaterials. 2025; 15(3):172.
https://doi.org/10.3390/nano15030172
Chicago/Turabian Style
Lin, Feng, Tuanzhuang Wu, Weidong Wang, Zhengxuan Wang, Yi Zhang, Sheng Li, Ran Ye, Long Zhang, Jiaxing Wei, Siyang Liu,
and et al. 2025. "Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp" Nanomaterials 15, no. 3: 172.
https://doi.org/10.3390/nano15030172
APA Style
Lin, F., Wu, T., Wang, W., Wang, Z., Zhang, Y., Li, S., Ye, R., Zhang, L., Wei, J., Liu, S., & Sun, W.
(2025). Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp. Nanomaterials, 15(3), 172.
https://doi.org/10.3390/nano15030172
