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Journal: NanomaterialsVolume: 15Number: 1469
Article: Highly Selective Isotropic Etching of Si to SiGe Using CF4/O2/N2 Plasma for Advanced GAA Nanosheet Transistor
- Authors:
- Jiayang Li1,
- Xin Sun2 and
- Ziqiang Huang1
- et al.
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