Zhang, Q.; Wang, C.; Wang, W.; Sun, R.; Zheng, R.; Ji, Q.; Yan, H.; Wang, Z.; He, X.; Wang, H.;
et al. Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe2 and Rotationally Aligned h-BN Monolayer. Nanomaterials 2025, 15, 1246.
https://doi.org/10.3390/nano15161246
AMA Style
Zhang Q, Wang C, Wang W, Sun R, Zheng R, Ji Q, Yan H, Wang Z, He X, Wang H,
et al. Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe2 and Rotationally Aligned h-BN Monolayer. Nanomaterials. 2025; 15(16):1246.
https://doi.org/10.3390/nano15161246
Chicago/Turabian Style
Zhang, Qiaoxuan, Cong Wang, Wenjie Wang, Rong Sun, Rongjie Zheng, Qingchang Ji, Hongwei Yan, Zhengbo Wang, Xin He, Hongyan Wang,
and et al. 2025. "Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe2 and Rotationally Aligned h-BN Monolayer" Nanomaterials 15, no. 16: 1246.
https://doi.org/10.3390/nano15161246
APA Style
Zhang, Q., Wang, C., Wang, W., Sun, R., Zheng, R., Ji, Q., Yan, H., Wang, Z., He, X., Wang, H., Yang, C., Yu, J., Zhang, L., Lei, M., & Wang, Z.
(2025). Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe2 and Rotationally Aligned h-BN Monolayer. Nanomaterials, 15(16), 1246.
https://doi.org/10.3390/nano15161246
