Mihai, C.; Simandan, I.-D.; Sava, F.; Tite, T.; Bocirnea, A.; Vaduva, M.; Zaki, M.Y.; Baibarac, M.; Velea, A.
Fabrication of High-Quality MoS2/Graphene Lateral Heterostructure Memristors. Nanomaterials 2025, 15, 1239.
https://doi.org/10.3390/nano15161239
AMA Style
Mihai C, Simandan I-D, Sava F, Tite T, Bocirnea A, Vaduva M, Zaki MY, Baibarac M, Velea A.
Fabrication of High-Quality MoS2/Graphene Lateral Heterostructure Memristors. Nanomaterials. 2025; 15(16):1239.
https://doi.org/10.3390/nano15161239
Chicago/Turabian Style
Mihai, Claudia, Iosif-Daniel Simandan, Florinel Sava, Teddy Tite, Amelia Bocirnea, Mirela Vaduva, Mohamed Yassine Zaki, Mihaela Baibarac, and Alin Velea.
2025. "Fabrication of High-Quality MoS2/Graphene Lateral Heterostructure Memristors" Nanomaterials 15, no. 16: 1239.
https://doi.org/10.3390/nano15161239
APA Style
Mihai, C., Simandan, I.-D., Sava, F., Tite, T., Bocirnea, A., Vaduva, M., Zaki, M. Y., Baibarac, M., & Velea, A.
(2025). Fabrication of High-Quality MoS2/Graphene Lateral Heterostructure Memristors. Nanomaterials, 15(16), 1239.
https://doi.org/10.3390/nano15161239
