Yu, J.; Ding, J.; Wang, T.; Huang, Y.; Du, W.; Liang, J.; Ma, H.; Zhang, Q.; Li, L.; Huang, W.;
et al. The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters. Nanomaterials 2024, 14, 1984.
https://doi.org/10.3390/nano14241984
AMA Style
Yu J, Ding J, Wang T, Huang Y, Du W, Liang J, Ma H, Zhang Q, Li L, Huang W,
et al. The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters. Nanomaterials. 2024; 14(24):1984.
https://doi.org/10.3390/nano14241984
Chicago/Turabian Style
Yu, Junfeng, Jihong Ding, Tao Wang, Yukai Huang, Wenzhang Du, Jiao Liang, Hongping Ma, Qingchun Zhang, Liang Li, Wei Huang,
and et al. 2024. "The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters" Nanomaterials 14, no. 24: 1984.
https://doi.org/10.3390/nano14241984
APA Style
Yu, J., Ding, J., Wang, T., Huang, Y., Du, W., Liang, J., Ma, H., Zhang, Q., Li, L., Huang, W., & Zhang, W.
(2024). The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters. Nanomaterials, 14(24), 1984.
https://doi.org/10.3390/nano14241984
