Lee, S.; Jeong, J.; Kang, B.; Lee, S.; Lee, J.; Lim, J.; Hwang, H.; Ahn, S.; Baek, R.
A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs. Nanomaterials 2023, 13, 868.
https://doi.org/10.3390/nano13050868
AMA Style
Lee S, Jeong J, Kang B, Lee S, Lee J, Lim J, Hwang H, Ahn S, Baek R.
A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs. Nanomaterials. 2023; 13(5):868.
https://doi.org/10.3390/nano13050868
Chicago/Turabian Style
Lee, Sanguk, Jinsu Jeong, Bohyeon Kang, Seunghwan Lee, Junjong Lee, Jaewan Lim, Hyeonjun Hwang, Sungmin Ahn, and Rockhyun Baek.
2023. "A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs" Nanomaterials 13, no. 5: 868.
https://doi.org/10.3390/nano13050868
APA Style
Lee, S., Jeong, J., Kang, B., Lee, S., Lee, J., Lim, J., Hwang, H., Ahn, S., & Baek, R.
(2023). A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs. Nanomaterials, 13(5), 868.
https://doi.org/10.3390/nano13050868